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? auirf7309q v dss 30v r ds(on) max. 0.05 ?? i d 4.7a -30v 0.10 ?? -3.5a n-ch p-ch description specifically designed for automoti ve applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achiev e low on-resistan ce per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. features ? advanced planar technology ? low on-resistance ? logic level gate drive ? dual n and p channel mosfet ? dynamic dv/dt rating ? 150c operating temperature ? fast switching ? lead-free, rohs compliant ? automotive qualified * 1 2015-9-30 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units n-channel p-channel i d @ t a = 25c 10 sec. pulsed drain current, v gs @ 10v 4.7 -3.5 a i d @ t a = 25c continuous drain current, v gs @ 10v 4.0 -3.0 i d @ t a = 70c continuous drain current, v gs @ 10v 3.2 -2.4 i dm pulsed drain current ? 16 -12 p d @t a = 25c maximum power dissipation ? 1.4 w linear derating factor ? 0.011 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt ? 6.9 -6.0 v/ns t j operating junction and c ? t stg storage temperature range -55 to + 150 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units c/w r ? ja junction-to-ambient ( pcb mount, steady state) ? ??? 90 so-8 auirf7309q base part number package type standard pack orderable part number form quantity auirf7309q so-8 tape and reel 4000 AUIRF7309QTR g d s gate drain source d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 p-channel mosfet n-channel mosfet
? auirf7309q 2 2015-9-30 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage n-ch 30 ??? ??? v v gs = 0v, i d = 250a p-ch -30 ??? ??? v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient n-ch ??? 0.032 ??? v/c reference to 25c, i d = 1ma p-ch ??? -0.037 ??? reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance n-ch ??? ??? 0.050 ???? v gs = 10v, i d = 2.4a ?? ??? ??? 0.080 v gs = 4.5v, i d = 2.0a ?? p-ch ??? ??? 0.10 v gs = -10v, i d = -1.8a ?? ??? ??? 0.16 v gs = -4.5v, i d = -1.5a ?? v gs(th) gate threshold voltage n-ch 1.0 ??? 3.0 v v ds = v gs , i d = 250a p-ch -1.0 ??? -3.0 v ds = v gs , i d = -250a gfs forward trans conductance n-ch 5.2 ??? ??? s v ds = 15v, i d = 2.4a p-ch 2.5 ??? ??? v ds = -24v, i d = -1.8a i dss ? drain-to-source leakage current ? n-ch ??? ??? 1.0 a ? v ds =24v, v gs = 0v p-ch ??? ??? -1.0 v ds = -24v,v gs = 0v ? n-ch ??? ??? 25 v ds =24v, v gs = 0v ,t j =125c p-ch ??? ??? -25 v ds = -24v,v gs = 0v,t j =125c ? i gss ? gate-to-source forward leakage n-p ??? ??? 100 na ? v gs = 20v ? gate-to-source reverse leakage n-p ??? ??? 100 v gs = 20v ? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge n-ch ??? ??? 25 nc ? n-channel p-ch ??? ??? 25 i d = 2.6a, v ds = 16v,v gs = 4.5v ? q gs gate-to-source charge n-ch ??? ??? 2.9 ????????????? p-ch ??? ??? 2.9 p-channel q gd gate-to-drain charge n-ch ??? ??? 7.9 i d = -2.2a,v ds = -16v,v gs = -4.5v p-ch ??? ??? 9.0 t d(on) turn-on delay time n-ch ??? 6.8 ??? ns ? n-channel p-ch ??? 11 ??? v dd = 10v,i d = 2.6a,r g = 6.0 ??? t r rise time n-ch ??? 21 ??? r d = 3.8 ?? p-ch ??? 17 ??? t d(off) turn-off delay time n-ch ??? 22 ??? p-channel p-ch ??? 25 ??? v dd = -10v,i d = -2.2a,r g = 6.0 ??? t f fall time n-ch ??? 7.7 ??? r d = 4.5 ?? p-ch ??? 18 ??? ? l d internal drain inductance n-p ??? 4.0 ??? nh ? between lead, 6mm(0.25n) from l s internal source inductance n-p ??? 6.0 ??? package and center of die contact c iss input capacitance n-ch ??? 520 ??? pf ? n-channel p-ch ??? 440 ??? v gs = 0v,v ds = 15v,? = 1.0mhz c oss output capacitance n-ch ??? 180 ??? ????????????????? p-ch ??? 200 ??? p-channel c rss reverse transfer capacitance n-ch ??? 72 ??? v gs = 0v,v ds = -15v,? = 1.0mhz p-ch 93 ??? diode characteristics ? parameter min. typ. max. units conditions i s ? continuous source current (body diode) n-ch ??? ??? 1.8 a ? p-ch ??? ??? -1.8 i sm ? pulsed source current n-ch ??? ??? 16 (body diode) ??? p-ch ??? ??? -12 v sd diode forward voltage n-ch ??? ??? 1.0 t j = 25c,i s = 1.8a,v gs = 0v ?? p-ch ??? ??? -1.0 t j = 25c,i s = -1.8a,v gs = 0v ?? t rr reverse recovery time n-ch ??? 47 71 ns n-channel p-ch ??? 53 80 t j = 25c ,i f = 2.6a, di/dt = 100a/s ?? q rr reverse recovery charge n-ch ??? 56 84 nc p-channel p-ch 66 99 t j = 25c,i f = -2.2a, di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) v notes: ? ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 23) ?? n-channel i sd ?? 2.4a, di/dt ?? 73a/s, v dd ?? v (br)dss , t j ? 150c. p-channel i sd ?? -1.8a, di/dt ?? 90a/s, v dd ?? v (br)dss , t j ? 150c ? pulse width ?? 300s; duty cycle ? 2%. ? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994
? auirf7309q 3 2015-9-30 fig. 2 typical output characteristics t j = 150c fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics t j = 25c n-channel
? auirf7309q 4 2015-9-30 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage n-channel
? auirf7309q 5 2015-9-30 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 11b. basic gate charge waveform n-channel
? auirf7309q 6 2015-9-30 p-channel fig. 13 typical output characteristics t j = 150c fig. 14 typical transfer characteristics fig. 15 normalized on-resistance vs. temperature fig. 12 typical output characteristics t j = 25c
? auirf7309q 7 2015-9-30 ? fig 16. typical capacitance vs. drain-to-source voltage fig 17. typical gate charge vs. gate-to-source voltage fig 19. maximum safe operating area fig. 18 typical source-to-drain diode forward voltage p-channel
? auirf7309q 8 2015-9-30 ? fig 20. maximum drain current vs. case temperature fig 21a. switching time test circuit fig 21b. switching time waveforms fig 22a. gate charge test circuit fig 22b. basic gate charge waveform p-channel
? auirf7309q 9 2015-9-30 fig 24. peak diode recovery dv/dt test circuit for n & p-channel hexfet ? power mosfets fig 23. maximum effective transient thermal impedance, junction-to-ambient n and p-channel
? auirf7309q 10 2015-9-30 ? so-8 part marking information so-8 package outline (dimensions are shown in millimeters (inches) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters in c h es min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c ab e1 a a1 8x b c 0.10 [.004] 43 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. outline conforms to jedec outline ms-012aa. n o tes: 1. d im en sio n in g & to leran c in g per asm e y14.5m -1994. 2. controlling dim ension: millimeter 3. dimensions are shown in millimeters [inches]. 5 d im en sio n d o es n o t in c lu d e m o ld pro tru sio n s. 6 d im en sio n d o es n o t in c lu d e m o ld pro tru sio n s. m o ld pro tru sio n s n o t to exc eed 0.25 [.010]. 7 d im en sio n is th e len g th o f lead fo r so ld erin g to a s u b s t r a t e . m o ld pro tru sio n s n o t to exc eed 0.15 [.006]. 8x 1.78 [.070]
? auirf7309q 11 2015-9-30 so-8 tape and reel ( dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541.
? auirf7309q 12 2015-9-30 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level so-8 msl1 esd machine model n ch: class m2 (+/- 150v) ? aec-q101-002 human body model ? n ch: class h1a (+/- 500v) ? aec-q101-001 charged device model n ch: class c5 (+/- 2000v) ? aec-q101-005 rohs compliant yes p ch: class m2(+/- 150v) ? p ch: class h0 (+/- 250v) ? p ch: class c5 (+/- 2000v) ? published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 9/30/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. 3/28/2014 ?? added "logic level gate drive" bullet in the features section on page 1 ?? updated data sheet with new ir corporate template ? highest passing voltage.

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